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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1902
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1902 is a switching device, which can be driven directly by a 4.5 V power source. This PA1902 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management switch of portable machine and so on.
2.8 0.2
PACKAGE DRAWING (Unit: mm)
0.32 +0.1 -0.05
0.65 -0.15
+0.1
0.16 +0.1 -0.06
6 1
5 2
4
0 to 0.1
FEATURES
* 4.5 V drive available * Low on-state resistance RDS(on)1 = 17 m TYP. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 22 m TYP. (VGS = 4.5 V, ID = 3.5 A)
1.5
3
0.65 0.9 to 1.1
0.4
0.95
0.95
1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type)
PA1902TE
Marking: TY
1, 2, 5, 6: Drain 3 : Gate 4 : Source
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Drain Current (pulse) Total Power Dissipation Note2 Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30
20 7.0 28
EQUIVALENT CIRCUIT
V V A A W W C C
Drain
0.2 2.0 150 -55 to +150
Gate
Body Diode
Source
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t 5 sec. Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. (It does not have built-in G-S protection diode.) When this product actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16634EJ1V0DS00 (1st edition) Date Published October 2003 NS CP(K) Printed in Japan
2003
PA1902
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 15 V VGS = 5.0 V ID = 7.0 A IF = 7.0 A, VGS = 0 V TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 3.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 1.0 A VGS = 10 V RG = 6.0 1.5 3.0 17 22 780 180 120 16 10 108 56 8.0 2.7 3.4 0.84 22 30 2.0 MIN. TYP. MAX. 1.0 100 2.5 UNIT
A
nA V S m m pF pF pF ns ns ns ns nC nC nC V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS
0 10%
IG = 2 mA VGS
90%
RL VDD
VDD
PG.
90% 90% 10% 10%
50
VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
2
Data Sheet G16634EJ1V0DS
PA1902
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm
120
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
TA - Ambient Temperature - C
2
1.5
1
0.5
0 0 25 50 75 100 125 150 175
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
ID - Drain Current - A
10
ID(DC)
PW = 1 ms
1
RDS(on) Limited (at VGS = 10 V) Single pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm
10 ms 100 ms 5s
0.1
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W
1000
Without board
100
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm
10
Single pulse
1
1m
10 m
100 m
1 PW - Pulse Width - s
10
100
1000
Data Sheet G16634EJ1V0DS
3
PA1902
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
30
Pulsed
100 10
ID - Drain Current - A
VGS = 10 V
25
ID - Drain Current - A
VDS = 10 V Pulsed
20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6
VDS - Drain to Source Voltage - V
4.5 V
1 0.1 0.01 0.001 0.0001 0
TA = 125C 75C 25C -25C
1
2
3
4
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
2.4
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V ID = 1.0 mA
100
VDS = 10 V Pulsed
10
1.9
1
TA = -25C 25C 75C 125C
1.4 -50 0 50 100 150 Tch - Channel Temperature - C
0.1 0.01
0.1
1
10
100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
60
VGS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
60
VGS = 4.5 V Pulsed TA = 125C 75C 25C -25C
40
TA = 125C 75C 25C -25C
40
20
20
0 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
ID - Drain Current - A
ID - Drain Current - A
4
Data Sheet G16634EJ1V0DS
PA1902
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
80
Pulsed
50
ID = 3.5 A Pulsed
60
40 30 20 10 0 -50 0 50 100 150
Tch - Channel Temperature - C
VGS = 4.5 V
40
10 V
20
ID = 3.5 A
0 0 5 10 15 20 25 VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1M Hz
1000
VDD = 15 V VGS = 10 V RG = 6.0
td(off)
1000
Ciss
100
tf td(on)
100
Coss Cr ss
10
tr
10 0.1 1 10 100
VDS - Drain to Source Voltage - V
1 0.1 1
ID - Drain Current - A
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
VGS - Gate to Source Voltage - V
100
IF - Diode Forward Current - A
VGS = 5.0 V ID = 7.0 A VDD = 24 V 15 V 6V
Pulsed
9 8 7 6 5 4 3 2 1 0 0
10
1
0.1
0.01
1
2
3
4
5
6
7
8
9
10
0.4
0.6
0.8
1
1.2
1.4
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
Data Sheet G16634EJ1V0DS
5
PA1902
* The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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